Wideband PA in 90nm CMOS
نویسندگان
چکیده
The opening up of the mm-wave band has created opportunities for high-data-rate communication, radar and medical imaging. The cost and size advantages of CMOS have motivated research on 60GHz CMOS front-end design [1]. However, very few CMOS mmwave power amplifiers (PAs) have been reported so far. Furthermore, most of the mm-wave PAs reported use bulky transmission lines [2, 3], increasing silicon area and incurring higher substrate losses.
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